Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon

Details Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon

2010-05-06

arxiv.org/abs/1005.1064v2

D Sleiter et al 2010 New J. Phys. 12 093028

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

17 pages, 6 figures

Scientific paper

10.1088/1367-2630/12/9/093028

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spins in isotopically purified 28Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.

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