Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2008-12-31
Phys. Rev. Lett. 102, 146804 (2009)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
5 pages, 6 figures; expanded version of the published paper (one extra page, one extra figure), including also a reference to
Scientific paper
10.1103/PhysRevLett.102.146804
The Goos-Hanchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha*=arcsin[sin alpha_c]^1/2 determined by the critical angle alpha_c for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a two-fold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e^2/h of the conductance with increasing channel width.
Akhmerov Anton R.
Beenakker C. W. J.
Sepkhanov R. A.
Tworzydlo Jakub
No associations
LandOfFree
Quantum Goos-Hanchen effect in graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Quantum Goos-Hanchen effect in graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum Goos-Hanchen effect in graphene will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-536761