Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2005-08-03
New Journal of Physics v7, p246 (2005)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
New Fig. 1, submitted to New Journal of Physics
Scientific paper
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied.
Blick Robert H.
Chu Jack O.
Coppersmith Susan N.
Eriksson Mark A.
Friesen Mark
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