Quantum dots based on spin properties of semiconductor heterostructures

Details Quantum dots based on spin properties of semiconductor heterostructures Quantum dots based on spin properties of semiconductor heterostructures

2003-11-04

arxiv.org/abs/cond-mat/0311077v2

Phys. Rev. B 69, 153308 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 3 figures. Accepted in PRB (Brief Report) (2004)

Scientific paper

10.1103/PhysRevB.69.153308

The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.

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