Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots

Details Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots

2006-09-14

arxiv.org/abs/cond-mat/0609350v1

Physics

Condensed Matter

Materials Science

Submitted to Appl. Phys. Lett

Scientific paper

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index substrates [11k], where k = 1,2,3 and are compared with [001]. We find that the QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case.

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