Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

Details Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

2006-08-22

arxiv.org/abs/cond-mat/0608482v1

J. Phys.: Conference Series 51 (2006) 379-386

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, accepted for publication in Proceedings of the Yamada Conference LX on Research in High Magnetic Fields (August 16-19

Scientific paper

10.1088/1742-6596/51/1/088

High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $\rho_{xx}$ near the critical filling factor $\nu_{c}$ ~ 0.5 follows the universal scaling law $\rho_{xx}(\nu, T) \propto exp[-\Delta \nu/(T/T_{0})^{\kappa}]$, where $\Delta \nu =\nu -\nu_{c}$. The critical exponent $\kappa$ equals $0.56 \pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.

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