Quantum control and manipulation of donor electrons in Si-based quantum computing

Details Quantum control and manipulation of donor electrons in Si-based quantum computing Quantum control and manipulation of donor electrons in Si-based quantum computing

2008-09-22

arxiv.org/abs/0809.3660v2

Journal of Applied Physics 105, 122410 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Invited Presentation at the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro - Brazil, Jul 27-Au

Scientific paper

10.1063/1.3124084

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.

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