Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Details Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

2010-06-04

arxiv.org/abs/1006.0933v2

Appl. Phys. Lett. 96, 222107 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3442508

Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement we extract the strength of the confinement potential of quantum dots.

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