Quantum ballistic transport in constrictions of n-PbTe

Details Quantum ballistic transport in constrictions of n-PbTe Quantum ballistic transport in constrictions of n-PbTe

1999-06-12

arxiv.org/abs/cond-mat/9906178v1

Phys. Rev. B 60, R5133 (1999).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 Postscript figures

Scientific paper

10.1103/PhysRevB.60.R5133

Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In the moderately strong magnetic fields perpendicular to the current, B>1T, the conductance shows accurate quantization in the units of 1e^2/h as a function of the side-gate voltage. In the absence of the field, a temperature-independent step structure, with an average step height approx. 1e^2/h, is observed. It is suggested that such a quantization may reflect the lifting of the Kramers degeneracy by the exchange interaction among the electrons, effective despite a large dielectric constant of bulk PbTe.

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