Quantized multi-terminal resistances in ferromagnetic graphene p-n junctions

Details Quantized multi-terminal resistances in ferromagnetic graphene p-n junctions Quantized multi-terminal resistances in ferromagnetic graphene p-n junctions

2011-09-16

arxiv.org/abs/1109.3545v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 5 figures

Scientific paper

The quantum Hall and longitudinal resistances in multi-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurements, the transverse contacts are assumed to be located at p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with lots of new robust quantum plateaus revealed due to the competition between spin splitting and local potentials.

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