Quantized Conductance in SnO2 nanobelts

Details Quantized Conductance in SnO2 nanobelts Quantized Conductance in SnO2 nanobelts

2012-01-17

arxiv.org/abs/1201.3640v4

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 pages, 5 figures, Revised, Re-submitted to "Applied Physics Letters"

Scientific paper

Field-induced quantized conductance is reported in tin oxide (SnO2) nanobelt back-gate field-effect transistors. The quantized conductance was observed in the form of current oscillations in the drain current vs. gate voltage characteristics, at low temperature. The quantized conductance is explained by a simple model in terms of a field-induced quantum confinement that created conditions for the successive filling of the electron energy-subbands as the gate voltage increases. The maximum subband separation was estimated in 6 meV, in good agreement with the experiment. Therefore, a novel quantum effect is reported in SnO2 nanobelts, which behave as bulk at zero gate field.

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