Quantized conductance in an AlAs 2D electron system quantum point contact

Details Quantized conductance in an AlAs 2D electron system quantum point contact Quantized conductance in an AlAs 2D electron system quantum point contact

2006-06-12

arxiv.org/abs/cond-mat/0606272v1

Phys. Rev. B. 74, 155 436 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 9 figures

Scientific paper

10.1103/PhysRevB.74.155436

We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced, one-dimensional electric subbands, we fabricated a point contact device defined by shallow-etching and a top gate that covers the entire device. The conductance versus top gate bias trace shows a series of weak plateaus at integer multiples of $2e^2/h$, indicating a broken valley degeneracy in the QPC and implying the potential use of QPC as a simple "valley filter" device. A model is presented to describe the quantized energy levels and the role of the in-plane valleys in the transport. We also observe a well-developed conductance plateau near $0.7x2e^2/h$ which may reflect the strong electron-electron interaction in the system.

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