Quantitative study of molecular N_2 trapped in disordered GaN:O films

Details Quantitative study of molecular N_2 trapped in disordered GaN:O films Quantitative study of molecular N_2 trapped in disordered GaN:O films

2004-08-09

arxiv.org/abs/cond-mat/0408174v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.70.235202

The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.

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