Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope

Details Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope

1997-12-15

arxiv.org/abs/cond-mat/9712171v1

Appl. Phys. Lett., vol. 72, no. 7, p. 861 (1998)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures; To be published in Appl. Phys. Lett. (2/16/98); See also Steinhauer et al., Appl. Phys. Lett., vol. 71, p.

Scientific paper

10.1063/1.120918

We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ohms/sq for 100 Ohms/sq films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cu3O7 (YBCO) thin film on a 5 cm-diameter sapphire wafer.

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