Pumping properties of the hybrid single-electron transistor in dissipative environment

Details Pumping properties of the hybrid single-electron transistor in dissipative environment Pumping properties of the hybrid single-electron transistor in dissipative environment

2009-05-20

arxiv.org/abs/0905.3402v1

Appl.Phys.Lett. 95, 112507 (2009)

Physics

Condensed Matter

Superconductivity

3 pages 4 figures

Scientific paper

10.1063/1.3227839

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.

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