Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever

Details Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever

1997-12-15

arxiv.org/abs/cond-mat/9712179v1

Physics

Condensed Matter

Materials Science

Five pages, four figures

Scientific paper

10.1016/S0039-6028(98)00477-4

The homoepitaxial growth of initially flat surfaces has so far always led to surfaces which become rougher and rougher as the number of layers increases: even in systems exhibiting ``layer by layer'' growth the registry of the layers is gradually lost. We propose that pulsed glancing-angle sputtering, once per monolayer, can in principle lead to layer-by-layer growth that continues indefinitely, if one additional parameter is controlled. We illustrate our suggestion with a fairly realistic simulation of the growth of a Pt (111) surface, coupled with a simplified model for the sputtering process.

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