Pulsed ESR Measurement of Coherence Times in Si:P at Very Low Temperatures

Details Pulsed ESR Measurement of Coherence Times in Si:P at Very Low Temperatures Pulsed ESR Measurement of Coherence Times in Si:P at Very Low Temperatures

2010-02-22

arxiv.org/abs/1002.4069v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, 34th ANZIP condensed matter and materials meeting 2010

Scientific paper

A purpose built millikelvin pulsed x-band ESR system is used to measure spin
decoherence times of phosphorus donor spins in 99.92% isotopically pure 28
silicon. The isolated P spin T2 is estimated at 260 (50) ms at 4.2 K and 330
(100) ms at 0.9 K.

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