Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3

Details Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3 Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3

2009-02-08

arxiv.org/abs/0902.1281v1

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

10.1063/1.3093673

We report pulsed as well as direct current/voltage induced electroresistance in Bi0.8Sr0.2MnO3 at room temperature. It is shown that bi-level and multi-level resistivity switching can be induced by a sequence of pulses of varying pulse width at fixed voltage amplitude. Resistivity increases abruptly (= 55 % at 300 K) upon reducing pulse width from 100 ms to 25 ms for a fixed electric field (E = 2 V/cm2) of 200 ms pulse period. The resistivity switching is accompanied by a periodic change in temperature which alone can not explain the magnitude of the resistivity change.

Affiliated with

Also associated with

No associations

Rating

Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3 does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3 will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-580830