Pseudo-gap features of intrinsic tunneling in (HgBr_2)-Bi2212 single crystals

Details Pseudo-gap features of intrinsic tunneling in (HgBr_2)-Bi2212 single crystals Pseudo-gap features of intrinsic tunneling in (HgBr_2)-Bi2212 single crystals

1999-07-10

arxiv.org/abs/cond-mat/9907159v1

Int. J. Mod. Phys. B 13, 3758-63 (1999).

Physics

Condensed Matter

Superconductivity

6 pages, 5 figures; presented at the Second Int Conf. New3Sc-1999 (Las Vegas, NV)

Scientific paper

The c-axis tunneling properties of both pristine Bi2212 and its HgBr$_2$ intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the $\it c$-axis direction have been observed. The dynamic conductance d$I/$d$V(V)$ shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the {\it c}-axis resistance does not change after the intercalation suggesting that a coupling between $\rm CuO_2$-bilayers has little effect on the pseudogap.

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