Proximity effect at the superconductor - topological insulator interface

Details Proximity effect at the superconductor - topological insulator interface Proximity effect at the superconductor - topological insulator interface

2010-02-03

arxiv.org/abs/1002.0842v2

Phys. Rev. B 81, 241310(R) (2010)

Physics

Condensed Matter

Superconductivity

4+ pages, 3 figures (published version)

Scientific paper

10.1103/PhysRevB.81.241310

We study the excitation spectrum of a topological insulator in contact with an s-wave superconductor, starting from a microscopic model, and develop an effective low-energy model for the proximity effect. In the vicinity of the Dirac cone vertex, the effective model describing the states localized at the interface is well approximated by a model of Dirac electrons experiencing superconducting s-wave pairing. Away from the cone vertex, the induced pairing potential develops a p-wave component with a magnitude sensitive to the structure of the interface. Observing the induced s-wave superconductivity may require tuning the chemical potential close to the Dirac point. Furthermore, we find that the proximity of the superconductor leads to a significant renormalization of the original parameters of the effective model describing the surface states of a topological insulator.

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