Proton induced upsets in the low altitude polar orbit

Details Proton induced upsets in the low altitude polar orbit Proton induced upsets in the low altitude polar orbit

Dec 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989itns...36.2339a&link_type=abstract

(IEEE, DNA, Sandia National Laboratories, and JPL, Annual Conference on Nuclear and Space Radiation Effects, 26th, Marco Island,

Physics

5

Cmos, Low Altitude, Polar Orbits, Proton Irradiation, Satellite-Borne Instruments, Single Event Upsets, Atlantic Ocean, Microprocessors, Nuclear Reactions, Pulse Communication, Radiation Belts, Random Access Memory

Scientific paper

The authors report on observations of single-event upsets occurring in large dynamic NMOS and static CMOS memories onboard the low-altitude, polar orbiting UOSAT-2 satellite. The strong localization of these upsets to the South Atlantic region leads to the conclusion that the majority of upsets in these devices are caused by nuclear reactions involving energetic radiation-belt protons encountered in the South Atlantic anomaly. The dynamic RAM upset rates are in agreement with the predictions of Bendel and Peterson (1983). Static CMOS RAMs are also found to be sensitive to proton-induced upsets, but presently there are not enough ground test data to make predictions.

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