Proposal of a spin torque majority gate logic

Details Proposal of a spin torque majority gate logic Proposal of a spin torque majority gate logic

2010-06-23

arxiv.org/abs/1006.4663v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 pages, 4 figures

Scientific paper

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.

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