Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-10-18
IEE Proceedings - Circuits, Devices and Systems, Vol.151, pp.63-67, February 2004
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Scientific paper
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors demonstrate for the first time that the proposed SiC emitter lateral NPM transistor shows superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect over its equivalent Si lateral NPN BJT and SiC emitter lateral NPN HBT. A simple fabrication process compatible with BiCMOS technology is also discussed.
Kumar Jagadesh M.
Rao D. V.
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