Properties and Curie Temperature (130 K) of Heavily Mn-doped Quaternary Alloy Ferromagnetic Semiconductor (InGaMn)As Grown on InP

Physics – Condensed Matter – Materials Science

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3 pages, 5 figures

Scientific paper

10.1016/j.physe.2003.11.174

We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of 130 K were observed.

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