Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect

Details Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect

2001-03-16

arxiv.org/abs/cond-mat/0103343v1

Nanotechnology 11 (2000) 351-358

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

pdf, 9 pages, 12 figures (included)

Scientific paper

10.1088/0957-4484/11/4/332

We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of the inter-Landau-level (LL) gaps deduced from the activated magnetotransport etc] to the quantum well (QW) characteristics has been revealed in the cases when the Fermi level reaches the second confinement subband. The background density of states (5-10)x10^{14} m^{-2}meV^{-1} deduced from the activation behavior of the magnetoresistance is too high to be attributed to the LL tails, but may be accounted for within a smooth random potential model. The hole gas in the Ge QW has been found to separate into two sublayers for d_w > ~35 nm and p_s = ~5x10^{15} m^{-2}. A dramatic indication to this separation is the disappearance of the quantum Hall (QH) plateau for the filling factor nu = 1 as calculated for the whole Ge layer. Concomitantly a positive magnetoresistance emerges in the weakest fields, from which about a factor of two different mobilities in the sublayers have been deduced. A model is suggested to explain the existence of the QH plateaux close to the fundamental values in a system of two parallel layers with different mobilities. A comparison of the simulated structure of the QH magnetoresistivity with the experimental one indicates that the hole densities in the sublayers are not much different. Thus, the different mobilities are due to different quality of the normal and inverted interfaces of the Ge QW.

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