Probing the metal-insulator transition of NdNiO3 by electrostatic doping

Details Probing the metal-insulator transition of NdNiO3 by electrostatic doping Probing the metal-insulator transition of NdNiO3 by electrostatic doping

2011-10-18

arxiv.org/abs/1110.4134v1

Appl. Phys. Lett. 99, 192107 (2011)

Physics

Condensed Matter

Materials Science

The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/

Scientific paper

10.1063/1.3659310

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films that are epitaxially grown on La-doped SrTiO3 films. We show that remote doping systematically changes the charge carrier density in the NdNiO3 film and causes a moderate shift in the metal-insulator transition temperature. These results are discussed in the context of theoretical models of this class of materials exhibiting a metal-insulator transition.

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