Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements

Details Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements

2007-09-05

arxiv.org/abs/0709.0727v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

"to appear in PRL"

Scientific paper

In-situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the $G^-$ band, accompanied by a substantial decrease of its line-width, is observed with electron or hole doping. In addition, we see an increase in Raman frequency of the $G^+$ band in semiconducting tubes. These results are quantitatively explained using ab-initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotubes.

Affiliated with

Also associated with

No associations

Rating

Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-471053