Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

Details Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

2008-02-11

arxiv.org/abs/0802.1378v1

J. Phys.: Condens. Matter 20 (2008) 295223.

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 7 figures

Scientific paper

10.1088/0953-8984/20/29/295223

Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation.

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