Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy

Details Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy

2006-11-24

arxiv.org/abs/cond-mat/0611625v1

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.

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