Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

Details Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

2011-10-04

arxiv.org/abs/1110.0757v2

Appl. Phys. Lett. 100, 023503 (2012)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures

Scientific paper

10.1063/1.3675862

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.

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