Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector

Details Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector

2012-03-07

arxiv.org/abs/1203.1386v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 4 figures, submitted to APL

Scientific paper

In a GaN/AlGaN field-effect terahertz detector, the directional photocurrent is mapped in the two-dimensional space of the gate voltage and the drain/source bias. It is found that not only the magnitude, but also the polarity, of the photocurrent can be tuned. A quasistatic self-mixing model taking into account the localized terahertz field provides a quantitative description of the detector characteristics. Strongly localized self-mixing is confirmed. It is therefore important to engineer the spatial distribution of the terahertz field and its coupling to the field-effect channel on the sub-micron scale.

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