Probe to properties of MgB2 thick film on silicon carbide substrate

Details Probe to properties of MgB2 thick film on silicon carbide substrate Probe to properties of MgB2 thick film on silicon carbide substrate

2006-08-25

arxiv.org/abs/cond-mat/0608549v1

Supercon. Sci. Technol. 19(10), 1073-1075 (2006)

Physics

Condensed Matter

Superconductivity

6 pages, 4 figures,Supercond. Sci. Technol. IN PRESS

Scientific paper

10.1088/0953-2048/19/10/015

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature TC above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density JC, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA/cm2 in self field at 10 K.

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