Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors

Details Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors

2008-08-06

arxiv.org/abs/0808.0865v2

Physics

Condensed Matter

Materials Science

To appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.102.057206

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific X-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4{\it f} and 5{\it d} electronic orbitals. Anion substitution (Te $\to$ O) enhances competing exchange pathways through spin-polarized anion {\it p} states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.

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