Prepyramid-to-pyramid transition of SiGe islands on Si(001)

Details Prepyramid-to-pyramid transition of SiGe islands on Si(001) Prepyramid-to-pyramid transition of SiGe islands on Si(001)

2003-06-19

arxiv.org/abs/cond-mat/0306491v2

Physics

Condensed Matter

Scientific paper

10.1103/PhysRevB.68.115301

The morphology of the first three-dimensional islands appearing during strained growth of SiGe alloys on Si(001) was investigated by scanning tunneling microscopy. High resolution images of individual islands and a statistical analysis of island shapes were used to reconstruct the evolution of the island shape as a function of size. As they grow, islands undergo a transition from completely unfacetted rough mounds (prepyramids) to partially {105} facetted islands and then they gradually evolve to {105} facetted pyramids. The results are in good agreement with the predictions of a recently proposed theoretical model.

Affiliated with

Also associated with

No associations

Rating

Prepyramid-to-pyramid transition of SiGe islands on Si(001) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Prepyramid-to-pyramid transition of SiGe islands on Si(001), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Prepyramid-to-pyramid transition of SiGe islands on Si(001) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-401846