Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

Details Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

2010-03-02

arxiv.org/abs/1003.0494v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 1 figures. Accepted for publication in Applied Physics Letters

Scientific paper

Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such as GaAs which do not have long spin lifetimes at room temperature. We show that wurtzite (w) materials, which possess smaller SO coupling due to being low-Z, are better suited for spintronics applications. This leads to predictions of spin lifetimes in w-AlN exceeding 2 ms at helium temperatures and, relevant to spintronic devices, spin lifetimes up to 0.5 $\mu s$ at room temperature.

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