Predicting the Ionization Threshold for Carriers in Excited Semiconductors

Details Predicting the Ionization Threshold for Carriers in Excited Semiconductors Predicting the Ionization Threshold for Carriers in Excited Semiconductors

2007-09-10

arxiv.org/abs/0709.1415v1

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1016/j.ssc.2008.01.012

A simple set of formulas is presented which allows prediction of the fraction
of ionized carriers in an electron-hole-exciton gas in a photoexcited
semiconductor. These results are related to recent experiments with excitons in
single and double quantum wells.

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