Predicted band structures of III-V semiconductors in wurtzite phase

Details Predicted band structures of III-V semiconductors in wurtzite phase Predicted band structures of III-V semiconductors in wurtzite phase

2009-08-13

arxiv.org/abs/0908.1984v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier {\it ab initio} calculations, and where experimental results are available (InP, InAs and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may lead to new functionalities for designing devices that manipulate spin degrees of freedom.

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