Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films

Details Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films

2005-11-15

arxiv.org/abs/cond-mat/0511361v1

Physics

Condensed Matter

Materials Science

12pages, 4figures

Scientific paper

10.1143/JJAP.44.L1426

We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn5Ge3. Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy analyses show phase separation of amorphous Ge1-xMnx clusters with high Mn content from a Mn-free monocrystalline Ge matrix. Since amorphous Ge1-xMnx was characterized as a homogeneous ferromagnetic semiconductor, the precipitation of the amorphous Ge1-xMnx clusters is the origin of the ferromagnetic semiconductor behavior of the epitaxially grown Mn-doped Ge films.

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