Potentials induced by the electron-optical-phonon interaction in a quantum well

Details Potentials induced by the electron-optical-phonon interaction in a quantum well Potentials induced by the electron-optical-phonon interaction in a quantum well

Mar 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995zphyb..99..375z&link_type=abstract

Zeitschrift für Physik B: Condensed Matter, Volume 99, Issue 1, pp.375-380

Physics

Condensed Matter

63.20.Kr, 63.20.Dj, 73.20.Dx

Scientific paper

The potential induced by the electron-optical-phonon interaction in a quantum well (QW) is investigated by means of the perturbation theory. We consider the interactions of an electron with both bulklike confined longitudinal optical (LO) phonons and four branches of interface optical (IO) phonons. The spatial distribution V i(z) of the induced potential for QW structures with different heterolayer compositions and different well widths is calculated in detail. The numerical results show that the heterolayer composition of the QW plays an important role in determining the shape of V i(z) and that the existence of IO-phonons is important to the electronic states in QWs.

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