Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface

Details Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface

2008-09-04

arxiv.org/abs/0809.0926v1

Physics

Condensed Matter

Materials Science

10 pages, 3 figures, and 1 table

Scientific paper

Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO$_{3}$ film on a SrTiO$_{3}$ substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel.

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