Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

Details Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

2004-06-24

arxiv.org/abs/cond-mat/0406584v3

Physics

Condensed Matter

Other Condensed Matter

13 pages, 4 figures

Scientific paper

10.1063/1.1875746

We demonstrate that in situ post-growth annealing of GaMnAs layers under As
capping is adequate for achieving high Curie temperatures (Tc) in a similar way
as ex situ annealing in air or in N2 atmosphere practiced earlier.

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