Possible Jahn-Teller effect in Si-inverse layers

Details Possible Jahn-Teller effect in Si-inverse layers Possible Jahn-Teller effect in Si-inverse layers

2002-11-11

arxiv.org/abs/cond-mat/0211214v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures

Scientific paper

10.1103/PhysRevB.67.125309

Jahn-Teller effect in bivalley Si(100) MOSFET under conditions of quantum Hall effect at integer filling factors nu=1,2,3 is studied. This system is described by SU(4) hidden symmetry. At nu=2 static and dynamic lattice deformation creates an easy-plane anisotropy and antiferromagnetic exchange and lifts the valley degeneracy. At nu=1,3 Coulomb interaction is essential to produce weak easy-plane anisotropy. Three phases: ferromagnetic, canted antiferromagnetic and spin-singlet, have been found. Anisotropy energy of charged skyrmion excitation in every phase is found.

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