Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

Details Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$ Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

2011-06-08

arxiv.org/abs/1106.1519v2

Physics

Condensed Matter

Materials Science

9 pages, 8 figures, 50 references

Scientific paper

Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster
ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband
near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical
modeling and experimental data.

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