Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Details Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

2010-06-21

arxiv.org/abs/1006.4060v2

Nanotechnology 21 (2010) 435601

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 4 figures

Scientific paper

10.1088/0957-4484/21/43/435601

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 \mum. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.

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