Physics
Scientific paper
Dec 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795..166m&link_type=abstract
Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume
Physics
Scientific paper
Active films coatings on porous silicon (PS) surface from semiconductors and dielectrics such as cadmium-mercury-telluride (CMT) narrow band semiconductors, oxide (Al2O3), chalcogenide materials (ZnS, CdTe), polymer and GaSe films were created. Possibility of optocouple creation for the wide spectral range (as light emitter and detector) from infrared to UV was considered. Photoluminescence, electroluminescence, photosensitivity of porous silicon (PS) were investigated. Light-emission and photosensitivity spectra such heterostructures in visible and infrared region were investigated. The principal properties of created grade-band heterostructure with monotonically increasing energy gap from 0.3-0.4 eV (CMT) to 2.8-3.0 eV (PS) showed the reaction of charge transferring on UV and visible light irradiation. The thermostimulated depolarization (TSD) spectra of PS in the range of temperatures 77-450 K were investigated.
Kavych Volodymyr
Kostiukevych Sergiy
Monastyrskii Liubomyr S.
Olenych Igor B.
Parandiy Petro P.
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