Porous silicon and cadmium-mercury-telluride (CMT)-based heterostructures for IR detectors

Details Porous silicon and cadmium-mercury-telluride (CMT)-based heterostructures for IR detectors Porous silicon and cadmium-mercury-telluride (CMT)-based heterostructures for IR detectors

Nov 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4454..238m&link_type=abstract

Proc. SPIE Vol. 4454, p. 238-243, Materials for Infrared Detectors, Randolph E. Longshore; Ed.

Physics

Scientific paper

We were investigated the creating process of porous silicon (porSi) and
CdHgTe based heterostructures for IR detectors. We were studied
current-voltage characteristics, photosensitivity and photoconductivity
in such heterojunctions and heterostructures after Hg ion irradiations.
It was shown that studied heterostructures may be used for IR detectors.

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