Population Inversion Induced by Resonant States in Semiconductors

Details Population Inversion Induced by Resonant States in Semiconductors Population Inversion Induced by Resonant States in Semiconductors

1998-11-25

arxiv.org/abs/cond-mat/9811358v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures submitted to Phys.Rev.Letters

Scientific paper

10.1103/PhysRevLett.83.644

We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.

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