Polaronic hole-trapping in doped $\rm BaBiO_3$

Details Polaronic hole-trapping in doped $\rm BaBiO_3$ Polaronic hole-trapping in doped $\rm BaBiO_3$

2008-12-05

arxiv.org/abs/0812.1238v2

Physics

Condensed Matter

Materials Science

Physical Review Letters, accepted (2009)

Scientific paper

The present {\em ab initio} study shows that in BaBiO$_3$, Bi$^{3+}$ sites can trap two holes from the valence band to form Bi$^{5+}$ cations. The trapping is accompanied by large local lattice distortions, therefore the composite particle consisting of the electronic-hole and the local lattice phonon field forms a polaron. Our study clearly shows that even $sp$ elements can trap carriers at lattice sites, if local lattice relaxations are sufficiently large to screen the localised hole. The derived model describes all relevant experimental results, and settles the issue of why hole doped BaBiO$_3$ remains semiconducting upon moderate hole doping.

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