Polarized interacting exciton gas in quantum wells and bulk semiconductors

Details Polarized interacting exciton gas in quantum wells and bulk semiconductors Polarized interacting exciton gas in quantum wells and bulk semiconductors

1995-10-24

arxiv.org/abs/cond-mat/9510138v1

Physics

Condensed Matter

Revtex, 4 figures sent by fax upon request by e-mail

Scientific paper

10.1103/PhysRevB.54.11582

We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton luminescence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at high exciton density $(5 \ \ 10^{10} cm ^2)$. Energy level splitting betwen spin +1 and spin -1 is shown to be due to many-body inter-excitonic exchange while the spin relaxation time is controlled by intra-exciton exchange.

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