Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Details Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

2007-05-24

arxiv.org/abs/0705.3595v1

J. Appl. Phys. 101, 113708 (2007)

Physics

Condensed Matter

Materials Science

accepted at Journal of Applied Physics

Scientific paper

10.1063/1.2743893

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.

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